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Page Title:
Power Amplifier Compartment (A8A1) |
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|  TM 11-5820-509-35
Ref des
Terminal no.
Resistance ohms
(8) Power Amplifier Compartment (A8A1) (fig.
7-8).
A7L5
1 to 2
50 10%
A7L6
1 to 2
50 10 %
Ref des
Terminal no
Resistance
A7L7
1 to 2
11.6 10 %
ohms
A7L8
1 to 2
50 10%
L102
1 to 2
29 10%
A7L16
1 to 2
7 5 10%
L103
1 to 2
50 10%
A7L17
1 to 2
7.5 10%
L104
1 to 2
Less than 1 ohm
A7L18
1 to 2
7.5 10%
L105
1 to 2
3.2 10%
A7L19
1 to 2
1.8 10%
L106
1 to 2
2.1 10%
A7L21
1 to 2
16.5 10
L109
1 to 2
Less than 1 ohm.
A7L22
1 to 2
16.5 10
to
A7L23
1 to 2
7.5 10%
L112
A7L24
1 to 2
7.5 10%
L120
1 to 2
.09 + 10%
to
L121
1 to 2
.09 + 10%
A7L26
L122
1 to 2
11.6 + 10%
A7L28
1 to 2
7.5 10%
L123
1 to 2
11.6 + 10%
to
(9) Power Amplifier Filter Box FL2 (A8A4A1) (
A7L32
fig. 7 -8 )
A7L34
1 to 2
29 10%
Ref des
Terminal no
Resistance ohms
to
L201
FL2-13 to FL2-26
29 10%
A7L37
L202
FL2-12 to FL2-25
29 10%
A7T1
primary
1.6 10%
L203
FL2-11 to FL2-24
29 10%
A7T1
half secondary
1.6 10%
L204
FL2-10 to FL2-23
29 10%
A7T1
half secondary
1.6 10%
L205
FL2-9 to FL2-22
29 10%
A7T2
primary
3.25 10
L206
FL2-8 to FL2-21
2 10%
A7T2
half secondary
1.25 10
L207
FL2-7 to FL2-20
29 10%
A7T2
half secondary
1.25 10
L208
FL2-6 to FL2-19
29 10%
A7T3
primary
1.6 10%
L209
FL2-5 to FL2-18
29 10%
A7T3
half secondary
1.6 10%
L210
FL2-4 to FL2-17
29 10%
A7T3
half secondary
1.6 10%
L211
FL2-3 to FL2-16
29 10%
A7T4
primary
3.25 10
b. Generally the forward resistance of the
A7T4
half secondary
1.25 10
semiconductor diode is less than 100 ohms, while the
reverse resistance will be greater than 10,000 ohms.
Resistance measurements are not always a true
(7) Electrical
Equipment
Chassis
CH-
indication of diode and transistor circuit performance,
474/PRC-47 ( A8A4 ) ( fig. 7-8 ).
and serious damage can result by making these
Ref des
Terminal No.
Resistance
measurements with an ordinary ohmmeter.
(ohms)
CAUTION
L1
1 to 2
1.2 10%
Do not make diode resistance
L2
1 to 2
1.2 10%
measurements with multitester TS-
L3
1 to 2
1.2 10%
352A/U or with any other instrument
L4
1 to 2
Less than 1 ohm.
whose source voltage exceeds 1.5
L5
1 to 2
72 10%
volts dc. The semiconductor can be
L6
1 to 2
72 10%
irreparably
damaged
by
such
T1
1 to 2
1 20%
voltages.
T1
2 to 3
60 20%
T1
3 to 4
1 20%
T2
1 to 2
80 20%
T2
3 to 4
2.2 10%
T3
1 to 2
.2 10%
T3
3 to 4
.5 10%
3-89
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